S-Band GaN on Si Based 1kW-Class SSPA System for Space Wireless Applications

• KOBAYASHI Yuta

  JAXA/ISAS

• YOSHIDA Satoshi

  JAXA/ISAS

• YAMAMOTO Zen-ichi

  JAXA/ISAS

• KAWASAKI Shigeo

  JAXA/ISAS

抄録

An S-band GaN on Si based 1kW-class SSPA system for space wireless applications is proposed. Since high-efficiency and high-reliability amplifier is one of the most important technologies for power and communication systems in a future space base station on a planet, compact, high-power, and high-efficiency SSPA is strongly requested instead of TWTA. Thus, we adopt GaN on Si based amplifier due to its remarkable material properties. At the beginning, thermal vacuum and radiation test of GaN on Si are conducted so as to confirm the space applicability. Fabricated SSPA system consists of eight 200W HPAs and coaxial waveguide power combiner. It achieves high efficiency such as 57% of drain efficiency and 87% of combining efficiency when RF output power achieves more than 60dBm. Furthermore, long-term stable operation and good phase noise characteristics are also confirmed.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E96.C (10), 1245-1253, 2013

  一般社団法人 電子情報通信学会

キーワード

• GaN on Si
• kW-class SSPA
• space wireless applications
• CW
• long-term operation
• phase noise
• space environmental testing

詳細情報

• CRID: 1390001204378521856
• NII論文ID: 130004519088
• DOI: 10.1587/transele.e96.c.1245
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E96.C/10/E96.C_1245/_pdf
• 本文言語コード: en
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