Numerical Study on Fabrication Tolerance of Half-Ridge InP Polarization Converters
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- ZAITSU Masaru
- The University of Tokyo
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- TANEMURA Takuo
- The University of Tokyo
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- NAKANO Yoshiaki
- The University of Tokyo
Abstract
Integrated InP polarization converters based on half-ridge structure are studied numerically. We demonstrate that the fabrication tolerance of the half-ridge structure can be extended significantly by introducing a slope at the ridge side and optimizing the thickness of the residual InGaAsP layer. High polarization conversion over 90 % is achieved with the broad range of the waveguide width from 705 to 915 nm, corresponding to a factor-of-two or larger improvement in the fabrication tolerance compared with that of the conventional polarization converters. Finally we present a simple fabrication procedure of this newly proposed structure, where the thickness of the residual InGaAsP layer is controlled precisely by using a thin etch-stop layer.
Journal
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- IEICE Transactions on Electronics
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IEICE Transactions on Electronics E97.C (7), 731-735, 2014
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390282679355134464
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- NII Article ID
- 130004519144
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- ISSN
- 17451353
- 09168524
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed