Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification.

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  • Fukano Yoshinobu
    Department of Physics, Faculty of Science, Hiroshima University, 1–3–1 Kagamiyama Higashi–Hiroshima, Hiroshima 724
  • Hontani Koji
    Department of Physics, Faculty of Science, Hiroshima University, 1–3–1 Kagamiyama Higashi–Hiroshima, Hiroshima 724
  • Uchihashi Takayuki
    Department of Physics, Faculty of Science, Hiroshima University, 1–3–1 Kagamiyama Higashi–Hiroshima, Hiroshima 724
  • Okusako Takahiro
    Department of Physics, Faculty of Science, Hiroshima University, 1–3–1 Kagamiyama Higashi–Hiroshima, Hiroshima 724
  • Chayahara Ayumi
    Department of Physics, Faculty of Science, Hiroshima University, 1–3–1 Kagamiyama Higashi–Hiroshima, Hiroshima 724
  • Sugawara Yasuhiro
    Department of Physics, Faculty of Science, Hiroshima University, 1–3–1 Kagamiyama Higashi–Hiroshima, Hiroshima 724
  • Yamanishi Yoshiki
    Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd., 1–8 Fusoh–cho Amagasaki, Hyogo 660
  • Oasa Takahiko
    Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd., 1–8 Fusoh–cho Amagasaki, Hyogo 660
  • Morita Seizo
    Department of Physics, Faculty of Science, Hiroshima University, 1–3–1 Kagamiyama Higashi–Hiroshima, Hiroshima 724

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抄録

We achieved time dependent dielectric breakdown (TDDB) measurement of a thin silicon oxide microscopically using contact electrification. By increasing the external bias voltage, TDDBs of the oxide layer without and with oxide surface roughening were observed sequentially. Charge-to-breakdown in the contact electrification was estimated to be on the order of 10-5~ 10-6 C/cm2. This value is higher than that of electrified charge density in the absence of external bias voltage, but is much smaller than the value of ~ 5× 10-1 C/cm2 obtained in the conventional TDDB measurement using a metal-oxide-semiconductor (MOS) capacitor. From calculation of the number of injected charges per atom, TDDB measurement using contact electrification is expected to provide a more quantitative evaluation of charge-to-breakdown than that using a MOS capacitor.

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