Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope.

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  • Sugawara Yasuhiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724
  • Ohta Masahiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724
  • Hontani Kouji
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724
  • Morita Seizo
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724
  • Osaka Fukunobu
    Optoelectronics Technology Research Laboratory, Tsukuba, Ibaraki 300–26
  • Ohkouchi Shunsuke
    Optoelectronics Technology Research Laboratory, Tsukuba, Ibaraki 300–26
  • Suzuki Mineharu
    NTT Interdisciplinary Research Laboratories, Atsugi, Kanagawa 243–01
  • Nagaoka Hideki
    Research Department, Olympus Optical Co., Ltd., Hachioji, Tokyo 192
  • Mishima Shuzo
    Research Department, Olympus Optical Co., Ltd., Hachioji, Tokyo 192
  • Okada Takao
    Research Department, Olympus Optical Co., Ltd., Hachioji, Tokyo 192

抄録

Atomic-resolution imaging of a GaAs(110) surface with an ultrahigh-vacuum atomic force microscope (UHV-AFM) was performed for the very first time. We also observed that the rectangular lattice of the surface is atomically destroyed by sequential scanning. This atomic destruction might be due to the vertical loading force of the probing tip. Furthermore, we observed that the rows of atomic protrusions along the [1\=10] direction were slightly in zigzag, and might be interpreted as quasi-one-dimensional zigzag chains consisting of alternating Ga and As atoms on the GaAs(110). These results suggest that the UHV-AFM has the potential for investigating semiconductor surfaces with dangling bonds on an atomic scale.

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