Dissipation of Contact Electrified Electrons on Dielectric Thin films with Silicon Substrate.

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  • Okusako Takahiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Uchihashi Takayuki
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Nakano Akihiko
    VLSI Development Laboratories, IC Group, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri 632
  • Ida Toru
    VLSI Development Laboratories, IC Group, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri 632
  • Sugawara Yasuhiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Morita Seizo
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724

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We studied microscopic contact electrification on three different kinds of dielectric thin films with the same silicon substrate, i.e., SiO2/Si, Si3N4/SiO2/Si (NOS) and SiO2/Si3N4/SiO2/Si, using a modified atomic force micro- scope (AFM). From the results, we clarified that reproducible and controllable contact electrification is possible on each sample. From the time evolution of the peak values and full widths at half-maximum (FWHMs) of electrostatic force due to contact-electrified electrons, we found that the stable-unstable phase transition occurs only on SiO2/Si and SiO2/Si3N4/SiO2/Si thin films with the SiO2 surface.

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