Contact Electrification on Thin Silicon Oxide in Vacuum.

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  • Tsuyuguchi Takeshi
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Uchihashi Takayuki
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Okusako Takahiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Sugawara Yasuhiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Morita Seizo
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Yamanishi Yoshiki
    Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd., Amagasaki 660
  • Oasa Takahiko
    Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd., Amagasaki 660

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We investigated the microscopic dissipation of contact electrified charges on a thin SiO2 film in vacuum where a thin layer of water may be adsorbed on the surface using an atomic force microscope (AFM). Charges with narrower spatial distributions were deposited in smaller amounts in vacuum than in air. Moreover, the deposited charge areas in vacuum showed no broadening with time after contact electrification. These demonstrate that the rapid surface diffusion of the charges in air may be caused by a water layer adsorbed on the insulator surfaces.

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