Heat Treatment and Steaming Effects of Silicon Oxide upon Electron Dissipation on Silicon Oxide Surface.

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  • Uchihashi Takayuki
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Okusako Takahiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Sugawara Yasuhiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Yamanishi Yoshiki
    Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd., Amagasaki 660
  • Oasa Takahiko
    Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd., Amagasaki 660
  • Morita Seizo
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724

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We investigated heat treatment and steaming effects of silicon oxide upon the surface dissipation of contact-electrified electrons. As a result, we found that the surface diffusion of densely contact-electrified electrons on the silicon oxide surface becomes slower due to the removal of the adsorbed water layer on a silicon oxide layer by means of heat treatment, while it is enhanced by the steamed water layer. From the heat treatment and steaming effects upon the dissipation process, we concluded that the stable state of densely contact-electrified electrons becomes more stable upon removal of the water layer.

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