TiN/TiSi<sub>2</sub> Formation Using TiN<sub>x</sub> Layer and Its Feasibilities in ULSI

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  • Byun Jeong Soo
    Semiconductor Research Laboratory of GoldStar Electron Co., Ltd., 50 Hyangjeong–dong, Cheongju–si 360–480, Korea
  • Kim Chang Reol
    Semiconductor Research Laboratory of GoldStar Electron Co., Ltd., 50 Hyangjeong–dong, Cheongju–si 360–480, Korea
  • Rha Kwan Goo
    Semiconductor Research Laboratory of GoldStar Electron Co., Ltd., 50 Hyangjeong–dong, Cheongju–si 360–480, Korea
  • Kim Jae Jeong
    Semiconductor Research Laboratory of GoldStar Electron Co., Ltd., 50 Hyangjeong–dong, Cheongju–si 360–480, Korea
  • Kim Woo Shik
    Semiconductor Research Laboratory of GoldStar Electron Co., Ltd., 50 Hyangjeong–dong, Cheongju–si 360–480, Korea

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  • TiN/TiSi2 Formation Using TiNx Layer and Its Feasibilities in ULSI.

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A new technique for the formation of the TiN/TiSi2 bilayer using a TiNx layer was described. The TiNx layer was deposited by sputtering in a mixed gas atmosphere of argon and nitrogen, wherein the concentration of nitrogen was controlled to be lower than that required in the formation of stoichiometric TiN. The nitrogen atoms in the Ti matrix relaxed the mechanical stress of the deposited film and also limited the number of Ti atoms available for the interaction with the Si substrate (i.e., silicidation reaction). Upon thermal annealing, TiNx changed to the bilayer structure of TiN/TiSi2, in which the thickness of the overlying TiN was so great that only a rather thin TiSi2 was formed between TiN and the Si substrate. Moreover, TiN had the (111) texture, and TiSi2 formed on the (100)Si substrate was found to show well-aligned epitaxial properties with an extremely uniform thickness.

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