Atomic-Resolution Imaging of ZnSSe(110) Surface with Ultrahigh-Vacuum Atomic Force Microscope(UHV-AFM).

• Sugawara Yasuhiro

  Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724, Japan

• Ohta Masahiro

  Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724, Japan

• Ueyama Hitoshi

  Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724, Japan

• Morita Seizo

  Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724, Japan

抄録

Atomic-resolution imaging of a ZnSSe(110) surface grown by molecular beam epitaxy on a GaAs substrate was demonstrated for the first time with an ultrahigh-vacuum atomic force microscope (UHV-AFM). A rectangular lattice with spacing of 5.6± 0.6 Å and 4.0± 0.4 Å is resolved. This result suggests that the UHV-AFM has potential to image the group II-VI compound semiconductor surfaces having dangling bonds, on an atomic scale.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 34 (4A), L462-L464, 1995

  The Japan Society of Applied Physics

キーワード

• ZnSSe
• ZnSe
• compound semiconductor
• atomic force microscope
• ultrahigh vacuum

詳細情報

• CRID: 1390282681223287296
• NII論文ID: 110003922797
• NII論文ID: 210000038685
• NII論文ID: 130004521238
• NII書誌ID: AA10650595
• DOI: 10.1143/jjap.34.l462
• COI: 1:CAS:528:DyaK2MXltFaht7s%3D
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.L462
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.L462/pdf
• 本文言語コード: en
• データソース種別:
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  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可