Stability of Densely Contact-Electrified Charges on Thin Silicon Oxide in Air.

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  • Morita Seizo
    Department of Electronic Engineering, Faculty of Engineering, Osaka University, Yamada–Oka, Suita 565, Japan
  • Uchihashi Takayuki
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 739, Japan
  • Okusako Takahiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 739, Japan
  • Yamanishi Yoshiki
    Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd., Amagasaki 660, Japan
  • Oasa Takahiko
    Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd., Amagasaki 660, Japan
  • Sugawara Yasuhiro
    Department of Electronic Engineering, Faculty of Engineering, Osaka University, Yamada–Oka, Suita 565, Japan

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  • Stability of Densely Contact-Electrifie

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By changing the polarity of charged trap sites, we investigated the stability of densely contact-electrified charges on thin silicon oxide in air using a modified atomic force microscope. For usual silicon oxides with positively charged trap sites, a stable state is obtained only for negative charge deposition, while for modified silicon oxides with negatively charged trap sites, a stable state is obtained only for positive charge deposition. As a result, we concluded that charged trap sites make densely contact-electrified charges with the same polarity unstable due to the strong Coulomb repulsive force.

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