Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism.

DOI Web Site Web Site Web Site 被引用文献4件 参考文献41件
  • Kamiura Yoichi
    Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan
  • Hayashi Masao
    Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan
  • Nishiyama Yoshihide
    Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan
  • Ohyama Shigeki
    Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan
  • Yamashita Yoshifumi
    Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan

書誌事項

タイトル別名
  • Electronically Induced Instability of a

この論文をさがす

抄録

We studied, by deep-level transient spectroscopy (DLTS), the dissociation mechanism of a hydrogen-carbon (H-C) complex, which has a donor level at E c-0.15 eV and acts as an electron trap in crystalline silicon. On the basis of our results and a previously proposed atomic model of the H-C complex, in which the hydrogen atom resides inside a silicon-carbon bond, we have proposed the following dissociation mechanism. The complex is stable in the positive charge state, and to dissociate it needs a hydrogen jump with an activation energy of 1.3 eV to break the bond with carbon and silicon. The complex becomes neutral by capturing an electron from the conduction band or accepting an electron directly from the valence band under electronic excitation, and is consequently dissociated at an activation energy of 0.5 eV due to the loss of binding. Strong evidence for the existence of the negative charge state of hydrogen in crystalline silicon is also presented.

収録刊行物

被引用文献 (4)*注記

もっと見る

参考文献 (41)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ