Structure and Stress-Induced Alignment of a Hydrogen-Carbon Complex in Silicon

• Kamiura Yoichi

  Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan

• Ishiga Nobuaki

  Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan

• Yamashita Yoshifumi

  Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan

書誌事項

タイトル別名

• Structure and Stress-Induced Aligmnent of a Hydrogen-Carbon Complex in Silicon.

抄録

We applied deep-level transient spectroscopy (DLTS) under uniaxial stress to study the structure and bonding nature of a hydrogen-carbon (H-C) complex in Si. The application of <111> and <110> compressive stresses split the DLTS peak into two as ratios of 1:3 and 2:2, respectively, which were the ratios of the low-temperature peak to the high-temperature peak. No splitting was observed under the <100> stress. These results indicate the trigonal symmetry of the H-C complex and the anti-bonding nature of its electronic state. We observed a stress-induced alignment of the complex at 250K for 50 min under a <110> stress of 1 GPa.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 36 (11A), L1419-L1421, 1997

  The Japan Society of Applied Physics

キーワード

• defect
• hydrogen
• carbon
• Si
• stress-induced alignment
• DLTS

詳細情報

• CRID: 1390001206247822208
• NII論文ID: 210000042370
• NII論文ID: 130004523087
• DOI: 10.1143/jjap.36.l1419
• COI: 1:CAS:528:DyaK2sXnsVemsrc%3D
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.36.L1419
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.36.L1419/pdf
• 本文言語コード: en
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