Electric Field-Effect Enhancement by a Combination of Coplanar High-T<sub>C</sub> Superconducting Devices with Step-Edge Junctions

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  • Suzuki Shigeru
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Meguro–ku, Tokyo 152–8552, Japan
  • Sugai Satoshi
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Meguro–ku, Tokyo 152–8552, Japan
  • Oda Shunri
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Meguro–ku, Tokyo 152–8552, Japan

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  • Electric Field-Effect Enhancement by a Combination of Coplanar High-TC Superconducting Devices with Step-Edge Junctions.
  • Electric Field-Effect Enhancement by a

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We investigated electric field-effect enhancement by combining a grain boundary junction with a coplanar-type superconducting field-effect device. Superconducting field-effect devices are promising for use in the design and construction of switching devices. Because of its structure, the coplanar device has advantages of low gate leakage current and simple fabrication process. These advantages can be enhanced when the device is combined with the grain boundary structure. We describe the fabrication process of a coplanar field-effect device with step-edge junctions and measurement of the electrical properties. The gate leakage current is sufficiently low for valid measurement. The channel I-V characteristics show large critical current modulation when negative gate voltage is applied.

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