Si(111) Surface under Phase Transitions Studied by the Analysis of Inner Layer Strucutres Using Bias-Dependent Scanning Tunneling Microscopy

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  • Miyake Koji
    Institute of Applied Physics, Center for TARA, CREST, Japan Science and Technology Corporation (JST), University of Tsukuba, Tsukuba 305–8573, Japan
  • Kaikoh Takashi
    Institute of Applied Physics, Center for TARA, CREST, Japan Science and Technology Corporation (JST), University of Tsukuba, Tsukuba 305–8573, Japan
  • Li Yan Jun
    Institute of Applied Physics, Center for TARA, CREST, Japan Science and Technology Corporation (JST), University of Tsukuba, Tsukuba 305–8573, Japan
  • Oigawa Haruhiro
    Institute of Applied Physics, Center for TARA, CREST, Japan Science and Technology Corporation (JST), University of Tsukuba, Tsukuba 305–8573, Japan
  • Shigekawa Hidemi
    Institute of Applied Physics, Center for TARA, CREST, Japan Science and Technology Corporation (JST), University of Tsukuba, Tsukuba 305–8573, Japan Department of Chemistry and Biotechnology, Graduate School of Engineering, The University of Tokyo, Hongo, Tokyo 113–8656, Japan

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  • Si(111) Surface under Phase Transitions Studied by the Analysis of Inner Layer Structures Using Bias-Dependent Scanning Tunneling Microscopy.

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In both cases of quenched and HBO2-molecule-irradiated Si(111) surfaces, corner holes are observed to exist along the boundaries between 7×7 and disordered structural domains. From the analysis of the bias-dependent STM images, it was found that the corner holes included complete stacking fault and dimer structures in the second layer, i.e., a complete corner hole. This result strongly indicates that the complete corner holes play important roles in both the formation and stabilization processes of the dimer-adatom-stacking fault (DAS) structure. In addition, the formation of a structure similar to that of the corner hole was often observed at the boundaries of three out-of-phase c(2×8) structural domains in quenched surfaces, which may result in nucleuses for the formation of the complete corner hole.

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