Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (1120) Face.

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Author(s)

    • Senzaki Junji
    • National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan|Ultra-Low-Loss Power Device Technology Research Body, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    • Kojima Kazutoshi
    • National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan|Ultra-Low-Loss Power Device Technology Research Body, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    • Harada Shinsuke
    • National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan|Ultra-Low-Loss Power Device Technology Research Body, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    • Kosugi Ryoji
    • National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan|Ultra-Low-Loss Power Device Technology Research Body, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    • Suzuki Seiji
    • R&D Association for Future Electron Devices, Advanced Power Device Laboratory, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan|Ultra-Low-Loss Power Device Technology Research Body, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    • Suzuki Takaya
    • R&D Association for Future Electron Devices, Advanced Power Device Laboratory, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan|Ultra-Low-Loss Power Device Technology Research Body, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    • Fukuda Kenji
    • National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan|Ultra-Low-Loss Power Device Technology Research Body, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Abstract

The interface properties of 4H-silicon carbide (SiC) metal-oxide-semiconductor (MOS) capacitors and the electrical properties of MOS field-effect transistors (MOSFETs) on the (11¯20) face fabricated using pyrogenic reoxidation annealing (pyrogenic ROA) have been characterized. Pyrogenic ROA reduces the interface-state density near the conduction band, resulting in an increase in the inversion channel mobility and a decrease of the threshold voltage for the MOSFETs with both dry and wet gate-oxides. Eventually, a high channel mobility of 68 cm<FONT SIZE="-1"><SUP>2</SUP></FONT>/(V·s) was successfully achieved in a MOSFET with wet gate-oxide using the pyrogenic ROA. On the (11¯20) face, the channel mobility of MOSFETs strongly depends on the interface-state density near the conduction band.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 40(11B), L1201-L1203, 2001

    The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    130004528035
  • Text Lang
    ENG
  • ISSN
    0021-4922
  • Data Source
    J-STAGE 
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