New III-V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
-
- Feng Gan
- Venture Laboratory, Kyoto Institute of Technology
-
- Yoshimoto Masahiro
- Cooperate Research Center, Kyoto Institute of Technology
-
- Oe Kunishige
- Department of Electronics and Information Science, Kyoto Institute of Technology
-
- Chayahara Akiyoshi
- AIST Kansai
-
- Horino Yuji
- AIST Kansai
抄録
A new Bi-containing III–V semiconductor InGaAsBi alloy was firstly grown by molecular beam epitaxy (MBE). The high crystalline quality of the InGaAsBi epilayer with smooth interfaces was confirmed by X-ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (RBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc-blende lattice sites.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 44 (37-41), L1161-L1163, 2005
The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001206264340096
-
- NII論文ID
- 210000059306
- 130004533539
-
- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可