New III-V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy

• Feng Gan

  Venture Laboratory, Kyoto Institute of Technology

• Yoshimoto Masahiro

  Cooperate Research Center, Kyoto Institute of Technology

• Oe Kunishige

  Department of Electronics and Information Science, Kyoto Institute of Technology

• Chayahara Akiyoshi

  AIST Kansai

• Horino Yuji

  AIST Kansai

Abstract

A new Bi-containing III–V semiconductor InGaAsBi alloy was firstly grown by molecular beam epitaxy (MBE). The high crystalline quality of the InGaAsBi epilayer with smooth interfaces was confirmed by X-ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (RBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc-blende lattice sites.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (37-41), L1161-L1163, 2005

  The Japan Society of Applied Physics

Keywords

• InGaAsBi
• MBE
• metastable alloy
• X-ray diffraction
• RBS

Details

• CRID: 1390001206264340096
• NII Article ID: 210000059306
• NII Article ID: 130004533539
• DOI: 10.1143/jjap.44.l1161
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L1161
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L1161/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed