Growth of Carbon Nanowalls on a SiO₂ Substrate by Microwave Plasma-Enhanced Chemical Vapor Deposition

• Tanaka Kei

  Nano High-Tech Research Center, Toyota Technological Institute

• Yoshimura Masamichi

  Nano High-Tech Research Center, Toyota Technological Institute

• Okamoto Atsuto

  Toyota Central R&D Lab., Inc.

• Ueda Kazuyuki

  Nano High-Tech Research Center, Toyota Technological Institute

書誌事項

タイトル別名

• Growth of Carbon Nanowalls on a SiO2 Substrate by Microwave Plasma-Enhanced Chemical Vapor Deposition

抄録

We investigated the growth process of carbon nanowalls (CNWs) on a SiO₂ substrate by microwave plasma-enhanced chemical vapor deposition (MPECVD). It is revealed that the CNWs are grown at the fine-textured structure on the SiO₂ and the growth process does not require the catalyst. The CNW initially has a semicircular shape. The height, thickness, and mesh size increase with growth time. It is found that the height of CNWs as a function of time obeys the square root law. Extremely high growth rate, approximately 10 μm/h, is achieved, in contrast to previous studies.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (4A), 2074-2076, 2005

  The Japan Society of Applied Physics

キーワード

• carbon nanowall
• growth process
• plasma CVD
• SiO<SUB>2</SUB>
• TEM
• carbon nanotube

詳細情報

• CRID: 1390001206264234368
• NII論文ID: 10015471393
• NII論文ID: 210000057655
• NII論文ID: 130004533649
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.44.2074
• COI: 1:CAS:528:DC%2BD2MXktFSltLw%3D
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• NDL書誌ID: 7302999
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7302999
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.2074
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.2074/pdf
• 本文言語コード: en
• データソース種別:
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