Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications

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Author(s)

    • Ishida Akihiro
    • Department of Electrical and Electronic Engineering, Shizuoka University
    • Matsue Kazuma
    • Department of Electrical and Electronic Engineering, Shizuoka University
    • Inoue Yoku
    • Department of Electrical and Electronic Engineering, Shizuoka University
    • Fujiyasu Hiroshi
    • Department of Electrical and Electronic Engineering, Shizuoka University
    • Ko Hang-Ju
    • Institute for Materials Research, Tohoku University

Abstract

An envelope function framework was used to calculate the conduction band structure of AlN/GaN quantum wells for application to quantum cascade lasers. We took into account the piezo- and spontaneous polarization fields in the nitride quantum wells. The design of the quantum cascade structures in the AlN/GaN system becomes much simpler if we utilize the effect of polarization fields. [(AlN)<SUB>1</SUB>/(GaN)<SUB><I>n</I>1</SUB>]<I><SUB>m</SUB></I>/(AlN)<SUB><I>n</I>2</SUB> quantum wells were prepared using hot-wall epitaxy for mid-infrared quantum cascade laser applications, and X-ray diffraction and transmission electron microscopy (TEM) measurements were performed on them. The X-ray diffraction measurements of the quantum wells were in good agreement with the theoretical pattern, and the coherent growth of quantum wells on the GaN buffer layers was ascertained by X-ray reciprocal mapping. The existence of a single atomic layer of AlN was observed by TEM measurements.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 44(8), 5918-5922, 2005

    The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    130004534647
  • Text Lang
    ENG
  • ISSN
    0021-4922
  • Data Source
    J-STAGE 
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