HRTEM Investigation of Interface Structure of Y and Ta Co-doped Zirconia/Silicon Heterostructure

• KIGUCHI Takanori

  Center for Advanced Materials Analysis, Tokyo Institute of Technology

• WAKIYA Naoki

  Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology

• SHINOZAKI Kazuo

  Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology

• MIZUTANI Nobuyasu

  Center for Advanced Materials Analysis, Tokyo Institute of Technology Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology

Abstract

The effects of co-doping with Y₂O₃ and Ta₂O₅ on the capacitance-voltage (C-V) characteristics and the SiO₂ interlayer growth of ZrO₂ based gate dielectrics has been examined. The width of the hysteresis window of 8 mol%Y₂O₃ and Ta₂O₅ stabilized ZrO₂(YTaSZ) gate dielectric has been almost 0 V, on the other hands, that of conventional 8 mol%Y₂O₃ stabilized ZrO₂(YSZ) gate dielectric has been 0.5 V. The density of interface trapped charge has increased than that of YSZ. Flat band voltage has been -1 V in YTaSZ larger than that of YSZ (∼0 V). High resolution transmission electron microscope (HRTEM) analysis has indicated that the growth of SiO₂ interlayer and the roughness of interface of YTaSZ are accelerated with the segregation of Ta oxide grains. It is found that this interface reaction cause these problems.

Journal

• Journal of the Ceramic Society of Japan, Supplement

  Journal of the Ceramic Society of Japan, Supplement 112 (0), S1111-S1114, 2004

  The Ceramic Society of Japan

Keywords

• Zirconia
• YSZ
• Ta
• Oxygen vacancy
• HRTEM
• C-V
• Gate dielectrics
• Si

Details

• CRID: 1390282680501038720
• NII Article ID: 130004610029
• DOI: 10.14852/jcersjsuppl.112.0.s1111.0
• ISSN: 13492756
• Text Lang: en
• Data Source:
  • JaLC
  • CiNii Articles
• Abstract License Flag: Disallowed