Resistive Oxygen Gas Sensors Using Ceria-Zirconia Thick Films

DOI
  • IZU Noriya
    Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • SHIN Woosuck
    Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • MATSUBARA Ichiro
    Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • MURAYAMA Norimitsu
    Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology (AIST)

Abstract

The resistive oxygen gas sensors using CeO2-ZrO2 thick films with various ZrO2 concentrations (0-60 mol% ZrO2) were fabricated. In order to decrease emission of exhaust gas, resistive oxygen sensors need to have low resistivity, good sensitivity and fast response. The thick films were screen-printed on alumina substrate with a viscous paste, a mixture of the CeO2-ZrO2 powders and organic binder. The resistivity of thick film (ρ) as a sensor output, the oxygen partial pressure dependence of the resistivity (n: the parameter in ρ∝P(O2)1/n, where P(O2) was oxygen partial pressure), and the response time of the thick film were investigated in detail. The thick film doped with 0.5-40 mol% ZrO2 had a shorter response time, a lower resistivity, and a better oxygen partial pressure dependence of resistivity compared to the thick film doped without ZrO2. Further, it became clear that the thick film doped with 10-30 mol% ZrO2 had the best sensor property in the CeO2-ZrO2 thick films. The mechanism of the effect of ZrO2 addition was also discussed.

Journal

Keywords

Details 詳細情報について

  • CRID
    1390282680499972096
  • NII Article ID
    130004610244
  • DOI
    10.14852/jcersjsuppl.112.0.s535.0
  • ISSN
    13492756
  • Text Lang
    en
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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