Study on accumulation process of As atoms in InP/GaInAs/InP hetero-structures

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The distributions of As atoms at InP/GaInAs interfaces were investigated by analyzing the X-ray CTR scattering spectra for the samples grown at different growth temperatures and with different H2-flushing times. From the results of the investigation, the adsorption and desorption processes of As atom on the GaInAs surface during the growth were discussed. Although the desorption of As from a surface progressed at all the investigated temperatures, 590, 620, and 650℃, a part of the As atoms, about 1.2[ML], remained on the surface even when the H2-flushing time was long. On the other hand, when the H2-flushing time was short, the amounts of As atoms were larger at higher growth temperatures, which suggested the decomposition of As precursor was enhanced at higher growth temperatures. All the results strongly indicated that the amount of As atoms incorporated in InP layer sensitively depends on the balance between the desorption and adsorption of As and that it is difficult to predict the degree of distribution of the As without a high resolution interface analysis like the X-ray CTR scattering measurement.

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