In-Situ Monitoring of Oxide Ion Induced Breakdown in Amorphous Tantalum Oxide Thin Film Using Acoustic Emission Measurement

• Tsuchiya Takashi

  Department of Materials Engineering, The University of Tokyo

• Ito Kaita

  Department of Materials Engineering, The University of Tokyo

• Miyoshi Shogo

  Department of Materials Engineering, The University of Tokyo

• Enoki Manabu

  Department of Materials Engineering, The University of Tokyo

• Yamaguchi Shu

  Department of Materials Engineering, The University of Tokyo

書誌事項

タイトル別名

• <i>In-Situ</i> Monitoring of Oxide Ion Induced Breakdown in Amorphous Tantalum Oxide Thin Film Using Acoustic Emission Measurement

抄録

An acoustic emission (AE) measurement was employed under DC bias applied condition to investigate breakdown behavior of highly resistive tantalum oxide thin film induced by redox reaction of oxide ion and its resultant generation of oxygen gas. Above dc bias of 14 V, AE event with strong components around 400 kHz and below 100 kHz was detected only once just after the bias was applied. On the other hand, a number of AE events were intermittently observed at 20 V, where the resistivity of the film drastically dropped. The behavior indicates oxygen gas was generated at the bottom electrode interface and released due to forming of a blister as large as several hundreds of micrometers.

収録刊行物

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 55 (10), 1553-1556, 2014

  公益社団法人 日本金属学会

キーワード

• nanoionics
• redox reaction
• acoustic emission

詳細情報

• CRID: 1390282679229270656
• NII論文ID: 130004678157
• NII書誌ID: AA1151294X
• DOI: 10.2320/matertrans.m2014198
• ISSN: 13475320
• ISSN: 13459678
• NDL書誌ID: 025805201
• Web Site: http://id.ndl.go.jp/bib/025805201
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I025805201
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/55/10/55_M2014198/_pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
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