Effect of Doping for Epitaxial (Ba₁-xYb[x])(Fe₀.₂Zr₀.₈)O₃−δ Thin Films with Yb

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  • Shinoda Ryoichi
    Department of Materials Science, Osaka Prefecture University
  • Hirao Norie
    Japan Atomic Energy Agency (JAEA-Tokai)
  • Baba Yuji
    Japan Atomic Energy Agency (JAEA-Tokai)
  • Iwase Akihiro
    Department of Materials Science, Osaka Prefecture University
  • Matsui Toshiyuki
    Department of Materials Science, Osaka Prefecture University Research Organization for the 21st century, Osaka Prefecture University

書誌事項

タイトル別名
  • Effect of Doping for Epitaxial (Ba<sub>1−</sub><i><sub>x</sub></i>Yb<i><sub>x</sub></i>)(Fe<sub>0.2</sub>Zr<sub>0.8</sub>)O<sub>3−δ</sub> Thin Films with Yb
  • Effect of Doping for Epitaxial (Ba<sub>1&minus;</sub><i><sub>x</sub></i>Yb<i><sub>x</sub></i>)(Fe<sub>0.2</sub>Zr<sub>0.8</sub>)O<sub>3&minus;&delta;</sub> Thin Films with Yb

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抄録

We fabricated epitaxial (Ba1−xYbx)(Fe0.2Zr0.8)O3−δ (BYFZO) thin films and studied their structural and dielectric properties using synchrotron X-ray photoelectron spectroscopy. The 10%-Yb-substituted BYFZO samples had almost the same good insulation properties as the non-doped BFZO samples. Saturation magnetization occurred at 0.242 µB/f.u. It is believed that a large amount of Yb3+ substitution produced carrier electrons, leading to recombination of the charge balance. This resulted in an increase in the leakage current and a decrease in the saturation magnetization. The ferromagnetic nature of the x = 0.0 and x = 0.1 samples was believed to have super-exchange interactions because the samples showed good dielectric properties. Additionally, for the x = 0.1 samples, the magnetic moments of the Yb3+ ions added to the magnetization. Therefore, the maximum saturation magnetization occurred when the amount of Yb-substitution was x = 0.1.

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  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 55 (10), 1521-1524, 2014

    公益社団法人 日本金属学会

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