InGaAs MSM photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform

• Cheng Yongpeng

  Department of Electrical Engineering and Information Systems, the University of Tokyo Japan Science and Technology Agency CREST

• Ikku Yuki

  Department of Electrical Engineering and Information Systems, the University of Tokyo Japan Science and Technology Agency CREST

• Takenaka Mitsuru

  Department of Electrical Engineering and Information Systems, the University of Tokyo Japan Science and Technology Agency CREST

• Takagi Shinichi

  Department of Electrical Engineering and Information Systems, the University of Tokyo Japan Science and Technology Agency CREST

抄録

An InGaAs metal-semiconductor-metal (MSM) photodetector (PD) monolithically integrated with an InP photonic-wire waveguide has been demonstrated by using III-V CMOS photonics platform. Owing to a Schottky contact between Ni and p-InGaAs, the MSM PD operation is obtained with a dark current of 270 nA at 1 V bias voltage. The 20-µm-long waveguide InGaAs PD exhibits responsivity of around 0.4 A/W and broadband operation covering the C- and L-bands, enabling wavelength division multiplexing (WDM) optical interconnects.

収録刊行物

• IEICE Electronics Express

  IEICE Electronics Express 11 (16), 20140609-20140609, 2014

  一般社団法人 電子情報通信学会

キーワード

• waveguide photodetector
• III-V CMOS photonics

詳細情報

• CRID: 1390282680189668096
• NII論文ID: 130004678211
• DOI: 10.1587/elex.11.20140609
• ISSN: 13492543
• Web Site: https://www.jstage.jst.go.jp/article/elex/11/16/11_11.20140609/_pdf
• 本文言語コード: en
• データソース種別:
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