Observation of high dielectric constant of Bi-Nb-O<sub>x</sub> thin-film capacitors fabricated by chemical solution deposition process

Access this Article

Author(s)

    • Onoue Masatoshi
    • Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project
    • Miyasako Takaaki
    • Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project
    • Tokumitsu Eisuke
    • Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project|Precision and Intelligence Laboratory, Tokyo Institute of Technology|Green Devices Research Center, Japan Advanced Institute of Science and Technology
    • Shimoda Tatsuya
    • Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project|Green Devices Research Center, Japan Advanced Institute of Science and Technology|School of Materials Science, Japan Advanced Institute of Science and Technology

Abstract

BiNbOx (BNO) thin films fabricated by a chemical solution deposition (CSD) under annealing conditions of 550°C and 20 min were found to exhibit an unprecedentedly high relative dielectric constant of 170, which is substantially greater than that of sputtered BNO films. Transmission electron microscopy analysis showed that the BNO film fabricated by CSD had two crysalline phases, β-BiNbO<sub>4</sub>, cubic pyrochlore, along with amorphous regions. In contrast, the BNO film deposited by sputtering consists of Bi<sub>3</sub>NbO<sub>7</sub> crystallites and amorphous regions and no cubic pyrochlore phase was found. The presence of the pyrochlore crystallites explains unprecedentedly high relative dielectric constant observed in CSD-derived BNO films.

Journal

  • IEICE Electronics Express

    IEICE Electronics Express 11(16), 20140651-20140651, 2014

    The Institute of Electronics, Information and Communication Engineers

Codes

Page Top