Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions

• Yukinari Masashi

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Sato Noriaki

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Nishiyama Nobuhiko

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Arai Shigehisa

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology Quantum Nanoelectronics Research Center, Tokyo Institute of Technology

Abstract

The spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser were studied under various collector–base voltages and emitter currents. The result shows that the peak wavelength shifts as a function of the output power resulting from voltage and current controls exhibited contrasting behavior under a continuous-wave operation.

Journal

• IEICE Electronics Express

  IEICE Electronics Express 11 (18), 20140679-20140679, 2014

  The Institute of Electronics, Information and Communication Engineers

Keywords

• semiconductor laser
• transistor laser
• AlGaInAs/InP

Details

• CRID: 1390282680188695168
• NII Article ID: 130004678234
• DOI: 10.1587/elex.11.20140679
• ISSN: 13492543
• Web Site: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100676861
• Web Site: https://www.jstage.jst.go.jp/article/elex/11/18/11_11.20140679/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • IRDB
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed