Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density

• Ohsawa Kazuto

  Department of Physical Electronics, Tokyo Institute of Technology

• Kato Atsushi

  Department of Physical Electronics, Tokyo Institute of Technology

• Kanazawa Toru

  Department of Physical Electronics, Tokyo Institute of Technology

• Uehara Eiji

  Department of Physical Electronics, Tokyo Institute of Technology

• Miyamoto Yasuyuki

  Department of Physical Electronics, Tokyo Institute of Technology

抄録

InGaAs is a promising material that can replace the current Si nMOSFET in CMOS because of its high electron mobility. To realize a high drain current density at a low supply voltage in InGaAs, the introduction of a heavily doped source is essential. We introduced an epitaxially grown n-InP source and obtained a high drain current density. However, short-channel effects were observed in a previous study; thus, we introduced extremely-thin-body III–V–OI InGaAs MOSFETs on a Si substrate. Accounting for the channel-thickness dependence, a drain current density of 2.04 A/mm at V_D = 0.5 V and clear suppression of the short-channel effects were observed for a channel thickness of 10 nm.

収録刊行物

• IEICE Electronics Express

  IEICE Electronics Express 11 (14), 20140567-20140567, 2014

  一般社団法人 電子情報通信学会

キーワード

• InGaAs MOSFET
• extremely thin body
• III–V–OI

詳細情報

• CRID: 1390282680189991808
• NII論文ID: 130004725760
• DOI: 10.1587/elex.11.20140567
• ISSN: 13492543
• Web Site: https://www.jstage.jst.go.jp/article/elex/11/14/11_11.20140567/_pdf
• 本文言語コード: en
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