Band-Structure Design of Fluoride Complex Materials for Deep-Ultraviolet Light-Emitting Diodes
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- Ono Shingo
- Institute for Molecular Science
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- Ouenzerfi Riadh El
- Institute for Molecular Science
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- Quema Alex
- Institute for Molecular Science
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- Murakami Hidetoshi
- Institute for Molecular Science
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- Sarukura Nobuhiko
- Institute for Molecular Science
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- Nishimatsu Takeshi
- Institute for Materials Research, Tohoku University
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- Terakubo Noriaki
- Institute for Materials Research, Tohoku University
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- Mizuseki Hiroshi
- Institute for Materials Research, Tohoku University
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- Kawazoe Yoshiyuki
- Institute for Materials Research, Tohoku University
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- Yoshikawa Akira
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Fukuda Tsuguo
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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抄録
The design principle for fluoride-containing optical devices for applications in the deep ultraviolet range is discussed. Variations in band gap energy, band structure and lattice constant of LiBaxCaySr(1−x−y)F3 and Li(1−x)KxBa(1−y)MgyF3 have been studied. The band structure and transition type of these fluorides are predicted by ab initio band calculations based on the local density approximation. The lattice-matched double-hetero structure of direct-band-gap compounds LiBaxCaySr(1−x−y)F3 on LiSrF3 and Li(1−x)KxBa(1−y)MgyF3 on either LiBaF3 or KMgF3 is sufficiently feasible to fabricate.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (10), 7285-7290, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681243475968
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- NII論文ID
- 130004765993
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 7478334
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可