Electronic Structure of Ordered Ga0.5In0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements

• Yamashita Kenichi

  Department of Electronics and Information Science, Kyoto Institute of Technology

• Oe Kunishige

  Department of Electronics and Information Science, Kyoto Institute of Technology

• Kita Takashi

  Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University

• Wada Osamu

  Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University

• Wang Yong

  Department of Physics, Graduate School of Science, Osaka University

• Geng Christian

  Physikalisches Institut, Universität Stuttgart

• Scholz Ferdinand

  Physikalisches Institut, Universität Stuttgart

• Schweizer Heinz

  Physikalisches Institut, Universität Stuttgart

Bibliographic Information

Other Title

• Electronic Structure of Ordered Ga_0.5In_0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements

Abstract

We have investigated the electronic band structure of a long-range-ordered Ga_0.5In_0.5P/GaAs heterointerface by optical measurements and a semi-empirical calculation. Raman-scattering spectra of the ordered Ga_0.5In_0.5P/GaAs samples show plasmon–phonon coupled modes induced by dense electron accumulation at the heterointerface, in contrast to that of the unordered sample which shows the spectrum of bulk GaAs. Furthermore, the Franz–Keldysh oscillation observed in the photoluminescence-excitation spectrum indicates a strong interface electric field. According to the results of a comparison between the experiment and a semi-empirical calculation based on Poisson’s law, it is found that the spatial distribution of the accumulated electron density is modified strongly by the conduction-band discontinuity and the interface field, depending on the order parameter.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (10), 7390-7394, 2005

  The Japan Society of Applied Physics

Keywords

• two-dimensional electron gas
• long-range ordering
• heterointerface
• Raman scattering
• photoluminescence
• plasmon–phonon coupling

Details

• CRID: 1390282681243356288
• NII Article ID: 130004766012
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.44.7390
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 7478591
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7478591
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.7390
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.7390/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed