Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
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- Nishiguchi Katsuhiko
- NTT Basic Research Laboratories, NTT Corporation
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- Crauste Olivier
- ESPCI
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- Namatsu Hideo
- NTT Basic Research Laboratories, NTT Corporation
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- Horiguchi Seiji
- Faculty of Engineering and Resource Science, Akita University
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- Ono Yukinori
- NTT Basic Research Laboratories, NTT Corporation
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- Fujiwara Akira
- NTT Basic Research Laboratories, NTT Corporation
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- Takahashi Yasuo
- Graduate School of Information Science and Technology, Hokkaido University
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- Inokawa Hiroshi
- NTT Basic Research Laboratories, NTT Corporation
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Abstract
A back-gate (BG) effect on a Coulomb blockade in a double-gate silicon-on-insulator (SOI) nanowire is investigated. The nanowire, which is situated at the bottom of a trench and connected to thicker source/drain regions, has a naturally formed barrier at both ends and works as a single-electron transistor at low temperatures. We found that a negative BG voltage increases the charging energy of the Coulomb-blockade island in the nanowire as well as the tunnel resistance of the barriers. This indicates the possibility that the BG voltage shifts the electron wave functions in the source/drain area away from the Coulomb-blockade island and decreases the capacitance of the small junctions located at both ends of the island.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (10), 7717-7719, 2005
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390282681243377152
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- NII Article ID
- 130004766081
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- NII Book ID
- AA10457675
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL BIB ID
- 7479826
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed