Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone

• Tosaka Aki

  National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier

• Nishiguchi Tetsuya

  National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier Meidensha Corporation

• Nonaka Hidehiko

  National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier

• Ichimura Shingo

  National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier

抄録

An ultra low-temperature (<300°C) silicon oxidation process in which KrF excimer laser light (λ=248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO₂ film was 5.2 nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO₂ in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler–Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (33-36), L1144-L1146, 2005

  The Japan Society of Applied Physics

キーワード

• silicon
• oxidation
• ozone
• UV light

詳細情報

• CRID: 1390001206263581312
• NII論文ID: 210000059301
• NII論文ID: 130004766231
• NII書誌ID: AA11906093
• DOI: 10.1143/jjap.44.l1144
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/00218979
• ISSN: http://id.crossref.org/issn/00214922
• ISSN: http://id.crossref.org/issn/13474065
• NDL書誌ID: 7425817
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7425817
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L1144
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L1144/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可