Effect of the Amount of Vacancies on the Thermoelectric Properties of Cu–Ga–Te Ternary Compounds

  • Plirdpring Theerayuth
    Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University Thermoelectric and Nanotechnology Research Center, Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi
  • Kurosaki Ken
    Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University
  • Kosuga Atsuko
    Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University
  • Ishimaru Manabu
    Institute of Scientific and Industrial Research, Osaka University
  • Harnwunggmoung Adul
    Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University Thermoelectric and Nanotechnology Research Center, Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi
  • Sugahara Tohru
    Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University
  • Ohishi Yuji
    Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University
  • Muta Hiroaki
    Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University
  • Yamanaka Shinsuke
    Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University Research Institute of Nuclear Engineering, University of Fukui

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  • Effect of the Amount of Vacancies on the Thermoelectric Properties of Cu–Ga–Te Ternary Compounds

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Abstract

The Cu–Ga–Te ternary compounds: Cu3Ga5Te9, Cu2Ga4Te7, CuGa3Te5, CuGa5Te8, and CuGaTe2 have zinc-blende or chalcopyrite structure. The compounds except for CuGaTe2 contain vacancies in the cation site due to the valence mismatch between cation and anion, and the vacancy concentration is different between these compounds. Here we investigated the effect of the amount of vacancies on the thermoelectric (TE) properties of the Cu–Ga–Te ternary compounds. At room temperature, the presence of vacancies reduced the Hall mobility (μH) and the lattice thermal conductivity (κlat), showing that the vacancies scattered both carriers and phonons. It was found that the decreasing rate of the μH was larger than that of the κlat. Therefore, the presence of vacancies degraded the TE performance of the Cu–Ga–Te ternary compounds. In other words, CuGaTe2 without vacancies would show the best TE figure of merit. The room temperature ZT values for Cu3Ga5Te9, Cu2Ga4Te7, CuGa3Te5, CuGa5Te8, and CuGaTe2 were 2.0 × 10−2, 2.4 × 10−2, 8.9 × 10−3, 1.3 × 10−2, and 5.6 × 10−3, respectively.

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 53 (7), 1212-1215, 2012

    The Japan Institute of Metals and Materials

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