EUV Interference Lithography for 1X nm

• Urayama Takuro

  Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo

• Watanabe Takeo

  Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo

• Yamaguchi Yuya

  Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo

• Matsuda Naohiro

  Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo

• Fukushima Yasuyuki

  Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo

• Iguchi Takafumi

  Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo

• Harada Tetsuo

  Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo

• Kinoshita Hiroo

  Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo

Abstract

EUV interference lithographic exposure tool was developed to evaluate hp 20 nm and below. The transmission diffraction grating with hp 30-nm absorber pattern was succeeded to fabricate. In the fabrication process of the transmission diffraction grating, SiO₂ hard mask process and the center stop process were applied to obtain high contrast of the interference fringes to replicate resist fine pattern. In addition, the vibration effect was succeeded to reduce. As results, hp 22.5 nm, hp 20 nm, hp 17.5 nm, and hp 15 nm resist patterns were succeeded to replicate by the two-luminous-flux interference exposure using the two-window transmission diffraction grating in EUV-IL. In addition, the hole pattern of hp 35 nm and hp 28-nm the four-luminous-flux interference exposure using the four-window transmission diffraction grating was succeeded to replicate.

Journal

• Journal of Photopolymer Science and Technology

  Journal of Photopolymer Science and Technology 24 (2), 153-157, 2011

  The Society of Photopolymer Science and Technology(SPST)

Keywords

• EUVL
• interference lithography
• grating
• resist
• non-chemical amplified

Details

• CRID: 1390001204323604224
• NII Article ID: 130004833387
• NII Book ID: AA11576862
• DOI: 10.2494/photopolymer.24.153
• COI: 1:CAS:528:DC%2BC3MXhtVOqsr3E
• ISSN: 13496336
• ISSN: 09149244
• NDL BIB ID: 11253999
• Web Site: http://id.ndl.go.jp/bib/11253999
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I11253999
• Web Site: http://www.jstage.jst.go.jp/article/photopolymer/24/2/24_2_153/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed