First-Principles Study of Field-Effect Doping in Nano-Scale Systems by the Enforced Fermi-Energy Difference Method
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- Uchida Kazuyuki
- NTT Basic Research Laboratories, Japan
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- Kageshima Hiroyuki
- NTT Basic Research Laboratories, Japan
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- Inokawa Hiroshi
- NTT Basic Research Laboratories, Japan
抄録
We propose a method for investigating the field-effect doping and the capacitance in nano-scale systems by first-principles calculations. Utilizing this method, we demonstrated the field-effect doping into the water bi-layer (channel) sandwiched by a pair of gate electrodes. We found that the H2O molecules rotated around the O atoms artificially pinned, accompanied by the bias application between the channel and gate electrodes. We confirmed that Q-μ relation (capacitance) was also modified through this rotation of the molecule. We believe that this kind of bias-induced structural modifications of the channel materials can be utilized for designing nano-electronic devices with a variety of novel and functional characteristics. [DOI: 10.1380/ejssnt.2005.453]
収録刊行物
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- e-Journal of Surface Science and Nanotechnology
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e-Journal of Surface Science and Nanotechnology 3 453-456, 2005
公益社団法人 日本表面真空学会
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390001205186311552
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- NII論文ID
- 130004933895
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- ISSN
- 13480391
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可