Theoretical investigation on the structural properties of ZnO grown on sapphire
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- Fujiwara Katsutoshi
- Department of Applied Mathematics and Physics, Tottori University, Japan
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- Ishii Akira
- Department of Applied Mathematics and Physics, Tottori University, Japan
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- Ebisuzaki Toshikazu
- Computational Astrophysics Laboratory, RIKEN, Japan
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- Abe Tomoki
- Department of Electrical and Electronic Engineering, Tottori University, Japan
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- Ando Koshi
- Department of Electrical and Electronic Engineering, Tottori University, Japan
抄録
We have investigated the growth mechanisms of ZnO on the c-plane sapphire(0001) substrates by the first-principles calculation. The first-principles total energy calculations of a sapphire slab with an isolated zinc adatom and an isolated oxygen adatom explain the experimental results such that the in-plane alignment between the ZnO and the sapphire is [10-10]ZnO//[11-20] sapphire. Moreover, from the experimental and theoretical results of GaN/sapphire growth mechanisms, the change of the polarity is very important for the migration barrier energy. The relative total energies for the isolated zinc adatom on the sapphire(0001) surface is very small while that for the isolated oxygen adatom on the sapphire(0001) surface is very large. When analogizing these relative energies with the experimental and theoretical results of GaN/sapphire growth mechanisms, we expect that the polarity of grown ZnO film on the sapphire substrate is the O-polarity. And the polarity of the direct growth of ZnO on the sapphire (0001) substrate does not change from the O-polarity under any growth conditions without using the low-temperature amorphous ZnO buffer layer. [DOI: 10.1380/ejssnt.2006.544]
収録刊行物
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- e-Journal of Surface Science and Nanotechnology
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e-Journal of Surface Science and Nanotechnology 4 544-547, 2006
公益社団法人 日本表面真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282680162927872
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- NII論文ID
- 130004933941
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- ISSN
- 13480391
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可