Bias-voltage Application in Hard X-Ray Photoelectron Spectroscopy for Characterization of Advanced Materials

DOI Web Site 8 Citations 14 References
  • Yamashita Yoshiyuki
    NIMS Beamline Station at SPring-8, National Institute for Materials Science, Japan Advanced Electronic Materials Center, National Institute for Materiasl Science, Japan
  • Ohmori Kenji
    Nano technology Laboratory, Waseda University, Japan
  • Ueda Shigenori
    NIMS Beamline Station at SPring-8, National Institute for Materials Science, Japan
  • Yoshikawa Hideki
    NIMS Beamline Station at SPring-8, National Institute for Materials Science, Japan
  • Chikyow Toyohiro
    Advanced Electronic Materials Center, National Institute for Materiasl Science, Japan
  • Kobayashi Keisuke
    NIMS Beamline Station at SPring-8, National Institute for Materials Science, Japan

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Other Title
  • Bias-voltage application in hard X-tay photoelectron spectroscopy for characterization of advanced materials

Abstract

We employed bias-voltage-application in hard x-ray photoelectron spectroscopy (BA-HXPES) to detect electronic states of materials in operating devices. To demonstrate the versatility of this method, we used a metal/SiO2/Si(100) structure as an ideal platform and found that electronic states at the SiO2/Si(100) interface were changed depending on the bias-application to the structure. By analyzing the change as a function of bias-voltage, the interface electronic states in the whole Si gap have been directly obtained in which these states cannot be detected without the bias-application. BA-HXPES is a new method to characterize electronic states for advanced materials under device operation. [DOI: 10.1380/ejssnt.2010.81]

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