Evaluation of Few-Layer Graphene Grown by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol

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Author(s)

    • Maeda Fumihiko
    • NTT Basic Research Laboratories, Nippon Telegraph and Telephone co., Japan
    • Hibino Hiroki
    • NTT Basic Research Laboratories, Nippon Telegraph and Telephone co., Japan

Abstract

To evaluate graphene grown by a new method based on gas-source molecular beam epitaxy (MBE), in which a cracked-ethanol source is employed, from the macroscopic viewpoint, we investigated crystal truncation rod scattering by x-ray reflectivity measurement. From the analysis of the x-ray reflectivity data, we found that the MBE-grown graphene forms a layered atomic structure from the macroscopic view, too. The average spacing of the MBE-grown graphene was 3.39 Å, which is larger than the interlayer spacing values for bulk crystalline graphite, and the height distributions of the MBE-grown graphene were relatively large. The occupancies of the graphene are smaller than unity and are smaller than that of its underlying graphene, suggesting that graphene did not grow in a layer-by-layer manner but in a three dimensional one, while each layer grew laterally. These results indicate that our new approach is feasible for the formation of wafer-scale graphene, although further improvement of the quality of the graphene by optimizing the growth condition is needed. [DOI: 10.1380/ejssnt.2011.58]

Journal

  • e-Journal of Surface Science and Nanotechnology

    e-Journal of Surface Science and Nanotechnology (9), 58-62, 2011

    The Surface Science Society of Japan

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