Room-temperature synthesis of epitaxial oxide thin films for development of unequilibrium structure and novel electronic functionalization

• YOSHIMOTO Mamoru

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• YAMAUCHI Ryosuke

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• SHIOJIRI Daishi

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• TAN Geng

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• KANEKO Satoru

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology Kanagawa Industrial Technology Center

• MATSUDA Akifumi

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

Abstract

Epitaxial growth of oxide films at lower temperatures is favored to obtain sharp interfaces and flat surfaces which are of advantage to construct high-quality electronic devices, and also is expected to result in novel development of unequilibrium structure and new electronic functionalization. Pulsed laser deposition (PLD) technique using laser ablation of a solid target is known to reduce the temperature drastically for epitaxial growth because of the highly energetic film precursors ablated from the target. In this article we briefly review the main achievements of our research group on room-temperature (RT, 20°C) synthesis of epitaxial oxide thin films by way of laser MBE process, i.e. PLD in ultrahigh vacuum. RT-epitaxial film growth by laser MBE and its electronic application were presented for some functional oxide thin films such as ZnO, Sn-doped In₂O₃ (ITO), sapphire (α-Al₂O₃), (Li,Ni)O, or (Mg,Ni)O, and also magnetic functionalization via selective post-depositional reduction of complex oxide films was demonstrated.

Journal

• Journal of the Ceramic Society of Japan

  Journal of the Ceramic Society of Japan 121 (1409), 1-9, 2013

  The Ceramic Society of Japan

Keywords

• Room-temperature epitaxial growth
• Oxide thin film
• Novel structure
• Laser MBE

Details

• CRID: 1390001205285592192
• NII Article ID: 130004950790
• NII Book ID: AA12229489
• DOI: 10.2109/jcersj2.121.1
• ISSN: 13486535
• ISSN: 18820743
• NDL BIB ID: 024173307
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024173307
• Web Site: https://www.jstage.jst.go.jp/article/jcersj2/121/1409/121_JCSJ-R12155/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed