Effect of Back-Etching on Electrical Properties of (111) - oriented PZT thin films

• Ohno Tomoya

  Department of Materials Science, Kitami Institute of Technology

• Malič Babara

  Electro Ceramics Department, Jožef Stefan Institute

• Kosec Marija

  Electro Ceramics Department, Jožef Stefan Institute

• Wakiya Naoki

  Graduate School of Science and Technology, Shizuoka University

• Suzuki Hisao

  Graduate School of Science and Technology, Shizuoka University

• Matsuda Takeshi

  Department of Materials Science, Kitami Institute of Technology

Abstract

(111)-oriented PZT(30/70) (PZT30) thin films were deposited on Pt/Ti/SiO₂/Si substrate by Chemical Solution Deposition (CSD). The part of the Si substrates of 500 μm thickness were etched from back side by a wet chemical etching process. The depth of the back-etching was controlled by changing the etching time (residual Si; 25-180 μm). Dielectric and ferroelectric properties for the PZT30 thin films were measured at the back-etched and the un-etched part to clarify the effect of the residual stress on the electrical properties. (XRD).

Journal

• Transactions of the Materials Research Society of Japan

  Transactions of the Materials Research Society of Japan 34 (1), 113-116, 2009

  The Materials Research Society of Japan

Keywords

• Residual Stress
• Back etching
• sol-gel
• PZT film
• ferroelectrics

Details

• CRID: 1390001205513361920
• NII Article ID: 130005003935
• DOI: 10.14723/tmrsj.34.113
• COI: 1:CAS:528:DC%2BD1MXmsFWns74%3D
• ISSN: 21881650
• ISSN: 13823469
• Text Lang: ja
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed