Formation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si_1-xGe_x/Si Structures

• Mizutani Takuya

  Graduate School of Eng., Nagoya Univ.

• Nakatsuka Osamu

  Graduate School of Eng., Nagoya Univ.

• Sakai Akira

  Graduate School of Eng. Sci., Osaka Univ.

• Kondo Hiroki

  Graduate School of Eng., Nagoya Univ.

• Zaima Shigeaki

  Graduate School of Eng., Nagoya Univ.

抄録

We have investigated the anisotropic strain structure of micro-patterned Ge/Si_1-xGe_x mesa lines. The elastic strain-relaxation of a Si_1-xGe_x layer by micro-patterning induces an uniaxial tensile strain into a Ge layer only for the direction perpendicular to the line. The pattern size dependence on the behavior of the elastic strain-relaxation of Si_1-xGe_x layers is analyzed by FEM. Additionally, the XRD results for micro-patterned samples suggest that the overetching depth of the Si substrate also influenced the strain-relaxation of the Si_1-xGe_x layers and the tensile-strain value of the Ge layers.

収録刊行物

• Transactions of the Materials Research Society of Japan

  Transactions of the Materials Research Society of Japan 34 (2), 305-308, 2009

  一般社団法人 日本MRS

キーワード

• elastic strain-relaxation
• tensile-strained germanium
• silicon germanium
• x-ray diffraction

詳細情報

• CRID: 1390001205513085056
• NII論文ID: 130005003982
• DOI: 10.14723/tmrsj.34.305
• COI: 1:CAS:528:DC%2BD1MXhtVOms7nM
• ISSN: 21881650
• ISSN: 13823469
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可