Experimental and <i>Ab Initio</i> Study of Donor State Deepening in Nanoscale SOI-MOSFETs

• Moraru Daniel

  Research Institute of Electronics, Shizuoka University

• Hamid Earfan

  Research Institute of Electronics, Shizuoka University

• Kuzuya Youhei

  Research Institute of Electronics, Shizuoka University

• Mizuno Takeshi

  Research Institute of Electronics, Shizuoka University

• The Anh Le

  School of Materials Science, Japan Advanced Institute of Science and Technology

• Mizuta Hiroshi

  School of Materials Science, Japan Advanced Institute of Science and Technology Nano Group, ECS, Faculty of Physical and Applied Sciences, University of Southampton

• Tabe Michiharu

  Research Institute of Electronics, Shizuoka University

Abstract

As electronic device dimensions are continuously reduced, new functions based on atomistic considerations can be implemented. Single-dopant transistors have been proposed based on a different mechanism as compared to conventional transistors, by making use of tunneling transport via individual dopant atoms located in nanoscale-channel transistors. However, typical dopants have shallow ground-state levels and thermally-activated transport becomes dominant at high temperatures. It is necessary to find a way to enhance the tunnel barrier height, i.e., to deepen the ground-state level, so that tunneling operation is maintained up to higher temperatures. In this work, as a first step, we use an atomistic simulation to extract information about the properties of dopants in nanostructures, in particular about the importance of channel design. For donors embedded in specifically-shaped channels, dielectric confinement effect is strong enough to ensure an enhancement of the tunnel barrier height. For the experimental study, we fabricated and characterized electrically nanoscale silicon-on-insulator field-effect transistors with ultra-thin stub-shaped channels. It was found that tunneling operation can be maintained even at elevated temperatures (approximately 100 K), which makes single-dopant transistors promising for more practical applications.

Journal

• Transactions of the Materials Research Society of Japan

  Transactions of the Materials Research Society of Japan 38 (2), 261-264, 2013

  The Materials Research Society of Japan

Keywords

• single-donor transistor
• single-electron tunneling
• silicon-on-insulator
• dielectric confinement effect

Details

• CRID: 1390001205512584576
• NII Article ID: 130005004227
• DOI: 10.14723/tmrsj.38.261
• COI: 1:CAS:528:DC%2BC3sXht1arsb%2FI
• ISSN: 21881650
• ISSN: 13823469
• Web Site: https://www.jstage.jst.go.jp/article/tmrsj/38/2/38_261/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed