Effects of Zn Doping on the Surface Structure and Initial Growth Processes of InP Thin Film Layers on InP(111)B Substrate

• Kato Masataka

  Depertment of Physics Engineering, Mie University

• Akiyama Toru

  Depertment of Physics Engineering, Mie University

• Nakamura Kohji

  Depertment of Physics Engineering, Mie University

• Ito Tomonori

  Depertment of Physics Engineering, Mie University

抄録

The effects of Zn atoms as a dopant on the surface structure and initial growth processes on InP(111)B substrate are theoretically investigated on the basis of surface phase diagrams which are obtained by comparing the adsorption energy given by ab initio calculations with the gas-phase chemical potentials. The calculated surface phase diagrams demonstrate that the Zn-incorporated surface is stabilized under the growth conditions with high Zn supply ratio. Furthermore, In atoms tend to easily adsorb on the Zn-incorporated surface as an In–P dimer due to the formation of Zn–P and P–P bonds, implying that the adsorption of In atoms and resultant growth processes are promoted on the Zn-incorporated InP(111)B surface which is stabilized under Zn-rich conditions. These results suggest that effects of Zn doping on the surface structure and initial growth processes are crucial for understanding the bidirectional growth mechanisms of InP nanowires on InP(111)B substrate. [DOI: 10.1380/ejssnt.2015.147]

収録刊行物

• e-Journal of Surface Science and Nanotechnology

  e-Journal of Surface Science and Nanotechnology 13 (0), 147-150, 2015

  公益社団法人 日本表面真空学会

キーワード

• Computer simulations
• Indium phosphide
• Zinc
• Surface structure

詳細情報

• CRID: 1390001205185599872
• NII論文ID: 130005063562
• DOI: 10.1380/ejssnt.2015.147
• ISSN: 13480391
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用不可