Application of Ion Beam Induced Chemical Vapor Deposition for SiC Film Formation on Si Substrates using Methylsilane

DOI 被引用文献6件 参考文献11件
  • Yoshimura Satoru
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
  • Sugimoto Satoshi
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
  • Murai Kensuke
    National Institute of Advanced Industrial Science and Technology (AIST)
  • Honjo Kuniaki
    National Institute of Advanced Industrial Science and Technology (AIST)
  • Kiuchi Masato
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University National Institute of Advanced Industrial Science and Technology (AIST)

抄録

We propose an experimental methodology for producing silicon carbide (SiC) films on Si substrates using an ion beam induced chemical vapor deposition (IBICVD) technique with methylsilane (SiH3CH3) as a gas source. Both methylsilane gas (1.2 sccm) and Ar ion beam (100 eV, 5μA) were simultaneously introduced onto Si(100) substrates. Temperatures of Si substrates were set at 600, 700, or 800°C. A SiC thin film was formed by the simultaneous introduction of methylsilane and Ar ions onto the Si substrate when the substrate temperature was 600°C. On the other hand, in the cases of 700 and 800°C, SiC films were formed by methylsilane gas alone and SiC film deposition rates by methylsilane gas with the Ar ion beam were approximately identical with those obtained without the Ar ion beam. We therefore conclude that the IBICVD technique with methylsilane is useful for SiC film formation on Si at relatively low substrate temperatures. [DOI: 10.1380/ejssnt.2015.174]

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詳細情報 詳細情報について

  • CRID
    1390001205186439424
  • NII論文ID
    130005065390
  • DOI
    10.1380/ejssnt.2015.174
  • ISSN
    13480391
  • 本文言語コード
    en
  • データソース種別
    • JaLC
    • Crossref
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用不可

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