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- WATANABE Tokinobu
- University of Toyama
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- HORI Masahiro
- University of Toyama
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- SARUWATARI Taiki
- University of Toyama
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- TSUCHIYA Toshiaki
- Shimane University
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- ONO Yukinori
- University of Toyama
抄録
Accuracy of a method for analyzing the interface defect properties; time-domain charge pumping method, is evaluated. The method monitors the charge pumping (CP) current in time domain, and thus we expect that it gives us a noble way to investigate the interface state properties. In this study, for the purpose of evaluating the accuracy of the method, the interface state density extracted from the time-domain data is compared with that measured using the conventional CP method. The results show that they are equal to each other for all measured devices with various defect densities, demonstrating that the time-domain CP method is sufficiently accurate for the defect density evaluation.
収録刊行物
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- IEICE Transactions on Electronics
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IEICE Transactions on Electronics E98.C (5), 390-394, 2015
一般社団法人 電子情報通信学会
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詳細情報 詳細情報について
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- CRID
- 1390282679354196352
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- NII論文ID
- 130005067742
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- ISSN
- 17451353
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可