Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements

• OHTA Akio

  Nagoya University

• LIU Chong

  Nagoya University

• ARAI Takashi

  Nagoya University

• TAKEUCHI Daichi

  Nagoya University

• ZHANG Hai

  Nagoya University

• MAKIHARA Katsunori

  Nagoya University

• MIYAZAKI Seiichi

  Nagoya University

Abstract

Ni nanodots (NDs) used as nano-scale top electrodes were formed on a 10-nm-thick Si-rich oxide (SiO_x)/Ni bottom electrode by exposing a 2-nm-thick Ni layer to remote H₂-plasma (H₂-RP) without external heating, and the resistance-switching behaviors of SiO_x were investigated from current-voltage (I–V) curves. Atomic force microscope (AFM) analyses confirmed the formation of electrically isolated Ni NDs as a result of surface migration and agglomeration of Ni atoms promoted by the surface recombination of H radicals. From local I–V measurements performed by contacting a single Ni ND as a top electrode with a Rh coated Si cantilever, a distinct uni-polar type resistance switching behavior was observed repeatedly despite an average contact area between the Ni ND and the SiO_x as small as ∼ 1.9 × 10^-12cm². This local I–V measurement technique is quite a simple method to evaluate the size scalability of switching properties.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E98.C (5), 406-410, 2015

  The Institute of Electronics, Information and Communication Engineers

Keywords

• Resistive Random Access Memory (ReRAM)
• Metal Nano-dots (NDs)
• Si Oxide (SiO<SUB>x</SUB>)
• MIM Diodes
• Atomic Force Microscope (AFM)

Details

• CRID: 1390001204377487744
• NII Article ID: 130005067745
• DOI: 10.1587/transele.e98.c.406
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E98.C/5/E98.C_406/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed