Development of MEMS Ultrasonic Sensor Using P(VDF/TrFE) Thin Films
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- Tanaka Tsunehisa
- Technology Research Institute of Osaka Prefecture
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- Murakami Shuichi
- Technology Research Institute of Osaka Prefecture
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- Uno Mayumi
- Technology Research Institute of Osaka Prefecture
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- Yamashita Kaoru
- Graduate School of Science and Technology, Kyoto Institute of Technology
Bibliographic Information
- Other Title
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- P(VDF/TrFE)薄膜を用いたMEMS超音波センサの開発
- P(VDF/TrFE)ハクマク オ モチイタ MEMS チョウオンパ センサ ノ カイハツ
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Abstract
MEMS ultrasonic sensor was fabricated using the poly(vinylidene fluoride-trifluoroethylene)[P(VDF/TrFE)] copolymer thin films having multilayer diaphragm structures. It was shown that the P(VDF/TrFE) thin film on MEMS ultrasonic sensor exhibit a remanent polarization Pr of 72 mC/m2 and a coercive field Ec of 59 MV/m. The resonant frequency, Q-value and sensitivity of the MEMS ultrasonic sensors are estimated to be on the order of 178 kHz, 24 and 45 µV/Pa, respectively. The P(VDF/TrFE) thin film was shown to be useful for piezoelectric material of MEMS ultrasonic sensor.
Journal
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- IEEJ Transactions on Sensors and Micromachines
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IEEJ Transactions on Sensors and Micromachines 135 (5), 145-151, 2015
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204462476032
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- NII Article ID
- 130005067828
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- NII Book ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL BIB ID
- 026421288
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed