Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors

• Clendennen Casey

  Division of Electrical, Electronic and Information Engineering, Osaka University

• Mori Nobuya

  Division of Electrical, Electronic and Information Engineering, Osaka University CREST, Japan Science and Technology Agency

• Tsuchiya Hideaki

  Department of Electrical and Electronic Engineering, Kobe University CREST, Japan Science and Technology Agency

抄録

Ballistic performance of graphene, silicene, and germanene-nanoribbon field-effect transistors (FETs) with a gate-length of 10 nm has been numerically investigated. The graphene-nanoribbon FET is found to have the largest ON-current when one compare FETs with a nanoribbon channel having a nearly equal band-gap E_g ≈ 0.5 eV. The graphene device exhibits the largest OFF-current due to the smallest effective-mass enhancing the source-drain direct tunneling.

収録刊行物

• 日本シミュレーション学会英文誌

  日本シミュレーション学会英文誌 2 (1), 171-177, 2015

  一般社団法人 日本シミュレーション学会

キーワード

• graphene
• silicene
• germanene
• nanoribbon
• FET
• NEGF

詳細情報

• CRID: 1390282680732066560
• NII論文ID: 130005073844
• DOI: 10.15748/jasse.2.171
• ISSN: 21885303
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可