Growth Characteristics of Graphene Film by Chemical Vapor Deposition Method Using Nozzle Gas Injection

• Matsuura Yusuke

  Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University

• Sato Hideki

  Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University

• Miyake Hideto

  Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University

Abstract

Graphene has attracted much attention due to its many unique properties and potential applications. It is considered that a chemical vapor deposition (CVD) method is a promising for growth method of graphene. We have examined growth characteristics of graphene by means of a low-pressure alcohol catalytic CVD (LP-ACCVD) method. Here nozzle gas injection is used to supply carbon source gas to a substrate. This method enables efficient supply of carbon source gas to a substrate for the growth of graphene. Therefore, an efficient growth and lowering of the growth temperature of graphene is expected. [DOI: 10.1380/ejssnt.2015.265]

Journal

• e-Journal of Surface Science and Nanotechnology

  e-Journal of Surface Science and Nanotechnology 13 (0), 265-268, 2015

  The Japan Society of Vacuum and Surface Science

Keywords

• Carbon
• Graphene
• Chemical vapor deposition
• Nozzle gas injection
• Low pressure alcohol catalytic CVD
• Iron

Details

• CRID: 1390282680162747904
• NII Article ID: 130005074894
• DOI: 10.1380/ejssnt.2015.265
• ISSN: 13480391
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed