水中での溶存酸素を介したGe 表面の金属アシストエッチングの基礎特性

• 有馬 健太

  大阪大学

• 川合 健太郎

  大阪大学

• 森田 瑞穂

  大阪大学

書誌事項

タイトル別名

• Fundamental Properties of Metal-Assisted Chemical Etching of Ge Surfaces Mediated by Dissolved O₂ Molecules in Water
• スイチュウ デ ノ ヨウゾンサンソ オ カイシタ Ge ヒョウメン ノ キンゾク アシストエッチング ノ キソ トクセイ

抄録

We demonstrate the metal-assisted chemical etching of Ge surfaces in water including dissolved oxygen molecules (O₂). It is shown that Ge surfaces around loaded Ag or Pt particles are etched anisotropically in water. The origin of the formation of etch pits on Ge (100) is explained by the enhanced oxidation of Ge to be soluble GeO₂ around the metallic particles by their catalytic activity, reducing dissolved O₂ to H₂O molecules. The reason for the appearance of (111) microfacets is also discussed. Secondly, we apply this electroless chemical etching in water for the nanoscale patterning of Ge surfaces using a cantilever probe in an atomic force microscopy setup. We investigate the effects of probematerials, dissolved-O₂ concentration and pressing forces on the etched depth of the Ge surface. The deepest pattern is obtained when both a Pt-coated probe and saturated-dissolved-oxygen water are used.

収録刊行物

• 表面科学

  表面科学 36 (7), 369-374, 2015

  公益社団法人 日本表面科学会

キーワード

• Ge surface
• oxide
• metal-assisted etching
• water
• oxygen reduction reaction

詳細情報

• CRID: 1390001206458386432
• NII論文ID: 130005088879
• NII書誌ID: AN00334149
• DOI: 10.1380/jsssj.36.369
• ISSN: 18814743
• ISSN: 03885321
• NDL書誌ID: 026605927
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I026605927
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用不可